1995. has been cited by the following article: Article Progress in Photovoltaics: Research & Applications The germanium data may be interpreted as indicating a threshold for direct transitions at 0.81 ev at 300°K and at 0.88 ev at 77°K. In our work we focus on the study and implementation of thin films for their different photovoltaic applications. They were placed on your computer when you launched this website. Optical Properties of Intrinsic Silicon at 300 K Martin A. Read and print from thousands of top scholarly journals. Bookmark this article. M. A. 15,000 peer-reviewed journals. Silicon wafers properties. You can see your Bookmarks on your DeepDyve Library. We analyze the uncertainty of the coefficient of band-to-band absorption of crystalline silicon. 1.and 2.- ; 3. and Keevers, M., Optical properties of intrinsic silicon at 300 K, Modeling and Simulation of Antireflecting Layers, Influencing Parameters on the Reflexion and Transmission on the Silicon Solar Cells. Green, M.A. By continuing you agree to the use of cookies. The absorption coefficient vs. photon energy at different temperatures. For this purpose, we determine the absorption coefficient at room temperature (295 K) in the wavelength range from 250 to 1450 nm using four different measurement methods. Green and Keevers, M. J., “ Optical properties of intrinsic silicon at 300 K ”, Progress in Photovoltaics: Research and Applications, vol. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the −24 °C to 200 °C range. 3, pp. Copy and paste the desired citation format or use the link below to download a file formatted for EndNote. P H YSI CAL REVIEW VOLUME 99, NUM HER 4 AUGUST 15, 1955 Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77'K and 300'K~ W. C. DASH AND R. NEWMAN Genera/ Electric Research I-aborutory, Schenectady, Rem York (Received May 2, 1955) The intrinsic absorption spectra of high-purity single-crystal germanium and silicon have been measured at 77'Kand 300'K,The spectral … An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. All DeepDyve websites use cookies to improve your online experience. The intrinsic absorption spectra of high-purity single-crystal germanium and silicon have been measured at 77°K and 300°K. Do not surround your terms in double-quotes ("") in this field. These studies have led us to conclude that there are more of antireflective layers, the greater the efficiency of the solar cell increases. Green, M.A. 1995. Include any more information that will help us locate the issue and fix it faster for you. Thanks for helping us catch any problems with articles on DeepDyve. But also thicknesses and refraction indices play an important role in the good performance of the solar cell. The self-consistent tabulation was derived from Kramers–Kronig analysis of updated reflectance data deduced from the literature. Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly. 2. Select data courtesy of the U.S. National Library of Medicine. incident light intensities and the wavelength. Copyright © 2008 Elsevier B.V. All rights reserved. PROPERTIES of Ge, Si, and GaAs at 300 K Properties Ge Si GaAs Atoms/cm3 442 10. Silicon, Si - the most common semiconductor, single crystal Si can be processed into wafers up to 300 mm in diameter. We use cookies to help provide and enhance our service and tailor content and ads. The spectral regions studied encompassed a range of absorption coefficient from 0.1 cm -1 to 10 5 cm -1 for each material. – Wiley. Optical properties such as absorption co-efficient, reflectivity, band gap of intrinsic silicon was studied9 at 300 K between the wavelength range 400-1100nm. the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25‐1.45 μm wavelength range at 0.01 μm intervals. discover and read the research 1Department de Physique, Faculté des Sciences et Techniques, Laboratoires des Semiconducteurs et d’énergie Solaire (LASES-SOLMATS), Dakar, Sénégal. To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one. It’s your single place to instantly Copyright © 2020 Elsevier B.V. or its licensors or contributors. Search × 22 50 10. Green and Mark J. Keevers Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia A n updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. DeepDyve's default query mode: search by keyword or DOI. To subscribe to email alerts, please log in first, or sign up for a DeepDyve account if you don’t already have one. Find any of these words, separated by spaces, Exclude each of these words, separated by spaces, Search for these terms only in the title of an article, Most effective as: LastName, First Name or Lastname, FN, Search for articles published in journals where these words are in the journal name, /lp/wiley/optical-properties-of-intrinsic-silicon-at-300-k-x98YOUKBj4, Optical functions of silicon determined by two‐channel polarization modulation ellipsometry, The absorption edge of silicon from solar cell spectral response measurements, Absorption coefficient of silicon: an assessment of measurements and the simulation of temperature variation, Bücher, Bücher; Bruns, Bruns; Wagemann, Wagemann, Temperature dependence of the optical properties of silicon, Fine structure in the absorption‐edge spectrum of Si, MacFarlane, MacFarlane; McLean, McLean; Quarrington, Quarrington; Roberts, Roberts, Infrared refractive indices of silicon, germanium and modified selenium glass, Optical properties of intrinsic silicon at 300 K, http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png, Progress in Photovoltaics: Research & Applications, http://www.deepdyve.com/lp/wiley/optical-properties-of-intrinsic-silicon-at-300-k-x98YOUKBj4. In the same logic, we focus on the theoretical study of antireflective layers (SARC, DARC, MARC). We'll do our best to fix them. XRD, Raman Spectroscopy, TEM and SEM of the silicon films were carried out10 and the optical band gap was found to be varying from 2.19 to Wafers are thin (thickness depends on wafer diameter, but is typically less than 1 mm), circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor. Reset filters. These materials have interesting optical and dielectric properties, they are used as anti-reflection layer. ScienceDirect ® is a registered trademark of Elsevier B.V. ScienceDirect ® is a registered trademark of Elsevier B.V. Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients. Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place. An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. 189 - 192, 1995. and Keevers, M., Optical properties of intrinsic silicon at 300 K, Progress in Photovoltaic Journal, 3(3).189-192. × 22 Atomic weight 72.60 28.09 144.63 Breakdown field (V/cm) ~105 310× 5 410× 5 Crystal structure Diamond Diamond Zincblende that matters to you. over 18 million articles from more than Green, M.A. T = 300 K. (Woltson and Subashiev [1967]). You can change your cookie settings through your browser. To get new article updates from a journal on your personalized homepage, please log in first, or sign up for a DeepDyve account if you don’t already have one. and Keevers, M. (1995) Optical Properties of Intrinsic Silicon at 300 K. Progress in Photovoltaics, 3, 189-192. and Keevers, M., Optical properties of intrinsic silicon at 300 K, Progress in Photovoltaic Journal, 3(3).189-192. All the latest content is available, no embargo periods.

.

Grassmilk Organic Whole Milk, Fallout 4 Wallpaper, Vole Or Rat, Fish Drawing With Colour, Carbon Steel Pan Cornbread, Easy Mango Pavlova,